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Maharashtra violence unfortunate, says Tripura Govt.Hello friends, I hope you all are doing great. Nehru's birth anniversary: Opposition slams govt over absence of RS Chairman, LS Speaker from Parliament eventĢ0 Indian fishermen released from Pakistan jail transported to Wagah border for handover on November 15: officialĬOVID-affected Afghan student in Kerala awaits e-visa for husband Withdraw Kangana Ranaut’s Padma Shri, DCW chief Swati Maliwal writes to President

Laxman will be next NCA head, confirms BCCI official “You have flexibility,” says Shubhadeep Bhattacharjee, PhD student at the Centre for Nano Science and Engineering, IISc and first author of the paper published in Applied Physics Letters.ĬM urges the public to exercise extreme caution given the heavy rain It also showed superior performance compared to current state-of-the-art tunnel FETs. The Schottky barrier is created when a metal and semiconductor are joined under certain conditions.Īccording to a release, the dual-gated device was able to operate at a voltage lower than possible with conventional MOSFETs, greatly reducing power consumption. The hybrid device is capable of switching between MOSFET and tunnel FET modes using two gates instead of one, and a special type of electron barrier called Schottky junction. But they also have a disadvantage: the desired output - the current flowing when the transistor is on - is greatly reduced. To overcome this, the tunnel FETs are being used.

The hybrid variety is an answer to issues that the most common MOSFETs have, that of being unable to bring down the supply voltage for MOSFETs proportionately with transistor size, because of a fundamental design flaw. The device has a special type of metal-semiconductor junction, which can be tweaked to make it behave either like a MOSFET or a tunnel FET. In a first, scientists at the Indian Institute of Science (IISc.) have combined two different types of transistors - MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) and tunnel FETs (Field Effect Transistor) - into a single device that can easily switch between power efficient and high performance modes, depending on the need.